Transition Capacitance

Posted By on December 17, 2014


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Comparison of Zener Breakdown and Avalanche Breakdown
Silicon Vs Germanium Diode

Transition capacitances:
1. When P-N junction is reverse biased the depletion region act as an insulator or as a dielectric medium and the p-type an N-type region have low resistance and act as the plates.

2. Thus this P-N junction can be considered as a parallel plate capacitor.

3. This junction capacitance is called as space charge capacitance or transition capacitance and is denoted as CT .

4. Since reverse bias causes the majority charge carriers to move away from the junction , so the thickness of the depletion region denoted as W increases with the increase in reverse bias voltage.

5. This incremental capacitance CT may be defined as

CT = dQ/dV,

Where dQ is the increase in charge and dV is the change or increase in voltage.

6. The depletion region increases with the increase in reverse bias potential the resulting transition capacitance decreases.

7. The formula for transition capacitance is given as CT = Aε/W, where A is the cross sectional area of the region, and W is the width.

Comparison of Zener Breakdown and Avalanche Breakdown
Silicon Vs Germanium Diode

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Posted by Akash Kurup

Founder and C.E.O, World4Engineers Educationist and Entrepreneur by passion. Orator and blogger by hobby

Website: http://world4engineers.com